XP10TN135N

XP10TN135N

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XP10TN135N
Single FETs, MOSFETs
YAGEO XSEMI
MOSFET N-CH 100
-
Tape & Reel (TR)
1
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37.0-40.0 GHz GaAs MMIC Power Amplifier
36.0-40.0 GHz GaAs MMIC Power Amplifier
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35.0-43.0 GHz GaAs MMIC Power Amplifier
34.0-37.0 GHz GaAs MMIC Power Amplifier
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MOSFET N-CH 100V 2.1A 3A SOT23

Product parameters
PDF(1)
TYPEDESCRIPTION
MfrYAGEO XSEMI
SeriesXP10TN135
PackageTape & Reel (TR)
Product StatusACTIVE
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C2.1A (Ta), 3A (Tc)
Rds On (Max) @ Id, Vgs135mOhm @ 2A, 10V
Power Dissipation (Max)1.38W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageSOT-23
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds980 pF @ 25 V

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