TW015Z120C,S1F

TW015Z120C,S1F

  • image of Single FETs, MOSFETs>TW015Z120C,S1F
  • image of Single FETs, MOSFETs>TW015Z120C,S1F
  • image of Single FETs, MOSFETs>TW015Z120C,S1F
  • image of Single FETs, MOSFETs>TW015Z120C,S1F
Part number TW015Z120C,S1F
Product classification Single FETs, MOSFETs
Manufacturer Toshiba Electronic Devices and Storage Corporation
Type G3 1200V SIC-MO
Encapsulation -
Packing Tube
RoHS status 1

Product advantages

G3 1200V SIC-MOSFET TO-247-4L 1

Product parameters
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TYPEDESCRIPTION
MfrToshiba Electronic Devices and Storage Corporation
Series-
PackageTube
Product StatusACTIVE
Package / CaseTO-247-4
Mounting TypeThrough Hole
Operating Temperature175°C
TechnologySiC (Silicon Carbide Junction Transistor)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Rds On (Max) @ Id, Vgs21mOhm @ 50A, 18V
Power Dissipation (Max)431W (Tc)
Vgs(th) (Max) @ Id5V @ 11.7mA
Supplier Device PackageTO-247-4L(X)
Drive Voltage (Max Rds On, Min Rds On)18V
Vgs (Max)+25V, -10V
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs158 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds6000 pF @ 800 V
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