BY25Q128ESWIG(R)

BY25Q128ESWIG(R)

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BY25Q128ESWIG(R)
Memory
BYTe Semiconductor
128 MBIT, 3.0V
-
Tape & Reel (TR)
1


128 MBIT, 3.0V (2.7V TO 3.6V), -

Product parameters
PDF(1)
TYPEDESCRIPTION
MfrBYTe Semiconductor
Series-
PackageTape & Reel (TR)
Product StatusACTIVE
Package / Case8-WDFN Exposed Pad
Mounting TypeSurface Mount
Memory Size128Mbit
Memory TypeNon-Volatile
Operating Temperature-40°C ~ 85°C (TA)
Voltage - Supply2.7V ~ 3.6V
TechnologyFLASH - NOR (SLC)
Clock Frequency120 MHz
Memory FormatFLASH
Supplier Device Package8-WSON (5x6)
Write Cycle Time - Word, Page60µs, 2.4ms
Memory InterfaceSPI - Quad I/O
Access Time7.5 ns
Memory Organization16M x 8

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