A60S330JT250T

A60S330JT250T

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A60S330JT250T
Ceramic Capacitors
Amotech
CAP CER 33PF 25
-
Bulk
1
INSULATED GATE BIPOLAR TRANSISTOR
30 A、600 V 超快速二极管
30A,600V,Ultrafast II 单二极管
快速恢复二极管
IGBT w/o anti-parallel diode
IGBT w/o anti-parallel diode
功率器件-双向可控硅
IGBT w/o anti-parallel diode
IGBT w/o anti-parallel diode
PCB安装型固态
功率器件-双向可控硅
低压线性驱动
快速恢复二极管
Insulated Gate Bipolar Transistor Trench PT IGBT, 650 V, 120 A Proprietary Vishay IGBT Silicon
Insulated Gate Bipolar Transistor Ultralow VCE(on), 250 A
4A 600V SENSITIVE TRIAC
快恢复二极管
快恢复二极管
4A 600V SENSITIVE TRIAC
快恢复二极管
快恢复二极管
4A 600V SENSITIVE TRIAC
四象限双向可控硅
四象限双向可控硅
四象限双向可控硅
四象限双向可控硅
四象限双向可控硅
四象限双向可控硅
四象限双向可控硅
四象限双向可控硅
四象限双向可控硅
四象限双向可控硅
双向可控硅
SCR
SCR
SCR
双向可控硅
双向可控硅
双向可控硅
SCR
SCR
SCR
SCR
SCR
SCR
SCR
双向可控硅
SCR
SCR
双向可控硅


CAP CER 33PF 250V C0G/NP0 0603

Product parameters
PDF(1)
TYPEDESCRIPTION
MfrAmotech
SeriesA60S
PackageBulk
Product StatusACTIVE
Tolerance±5%
FeaturesHigh Q, Low Loss, Ultra Low ESR
Voltage - Rated250V
Package / Case0603 (1608 Metric)
Temperature CoefficientC0G, NP0
Size / Dimension0.063" L x 0.031" W (1.60mm x 0.80mm)
Mounting TypeSurface Mount, MLCC
Operating Temperature-55°C ~ 125°C
ApplicationsRF, Microwave, High Frequency
Thickness (Max)0.035" (0.89mm)
Capacitance33 pF

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