TC58BYG0S3HBAI6

TC58BYG0S3HBAI6

  • image of Memory>TC58BYG0S3HBAI6
  • image of Memory>TC58BYG0S3HBAI6
Part number TC58BYG0S3HBAI6
Product classification Memory
Manufacturer Toshiba Memory America, Inc. (Kioxia America, Inc.)
Type IC FLASH 1GBIT
Encapsulation -
Packing Tray
RoHS status 1

Product advantages

IC FLASH 1GBIT PARALLEL 67VFBGA

Product parameters
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TYPEDESCRIPTION
MfrToshiba Memory America, Inc. (Kioxia America, Inc.)
SeriesBenand™
PackageTray
Product StatusACTIVE
Package / Case67-VFBGA
Mounting TypeSurface Mount
Memory Size1Gbit
Memory TypeNon-Volatile
Operating Temperature-40°C ~ 85°C (TA)
Voltage - Supply1.7V ~ 1.95V
TechnologyFLASH - NAND (SLC)
Memory FormatFLASH
Supplier Device Package67-VFBGA (6.5x8)
Write Cycle Time - Word, Page25ns
Memory InterfaceParallel
Access Time25 ns
Memory Organization128M x 8
DigiKey ProgrammableNot Verified
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