NE85633-T1B-A

NE85633-T1B-A

  • image of Bipolar RF Transistors>NE85633-T1B-A
  • image of Bipolar RF Transistors>NE85633-T1B-A
NE85633-T1B-A
Bipolar RF Transistors
CEL (California Eastern Laboratories)
SAME AS 2SC3356
-
Tape & Reel (TR)
1
NPN SILICON HIGH FREQUENCY TRANSISTOR
NPN SILICON TRANSISTOR
NPN SILICON TRANSISTOR
NPN SILICON TRANSISTOR
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
NONLINEAR MODEL


SAME AS 2SC3356 NPN SILICON AMPL

Product parameters
PDF(1)
TYPEDESCRIPTION
MfrCEL (California Eastern Laboratories)
Series-
PackageTape & Reel (TR)
Product StatusOBSOLETE
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain11.5dB
Power - Max200mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)12V
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 20mA, 10V
Frequency - Transition7GHz
Noise Figure (dB Typ @ f)1.1dB @ 1GHz
Supplier Device Package3-MINIMOLD

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