AIMZHN120R120M1TXKSA1
| ： | AIMZHN120R120M1TXKSA1 |
|---|---|
| ： | Single FETs, MOSFETs |
| ： | IR (Infineon Technologies) |
| ： | SIC_DISCRETE |
| ： | - |
| ： | Tube |
| ： | 1 |
| TYPE | DESCRIPTION |
| Mfr | IR (Infineon Technologies) |
| Series | - |
| Package | Tube |
| Product Status | ACTIVE |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 7A, 20V |
| Power Dissipation (Max) | 133W (Tc) |
| Vgs(th) (Max) @ Id | 5.1V @ 2.2mA |
| Supplier Device Package | PG-TO247-4-14 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 18V, 20V |
| Vgs (Max) | +23V, -5V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 458 pF @ 800 V |
| Qualification | AEC-Q101 |
