AIMZHN120R120M1TXKSA1

AIMZHN120R120M1TXKSA1

  • image of Single FETs, MOSFETs>AIMZHN120R120M1TXKSA1
  • image of Single FETs, MOSFETs>AIMZHN120R120M1TXKSA1
AIMZHN120R120M1TXKSA1
Single FETs, MOSFETs
IR (Infineon Technologies)
SIC_DISCRETE
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Tube
1


SIC_DISCRETE

Product parameters
PDF(1)
TYPEDESCRIPTION
MfrIR (Infineon Technologies)
Series-
PackageTube
Product StatusACTIVE
Package / CaseTO-247-4
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologySiC (Silicon Carbide Junction Transistor)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C22A (Tc)
Rds On (Max) @ Id, Vgs150mOhm @ 7A, 20V
Power Dissipation (Max)133W (Tc)
Vgs(th) (Max) @ Id5.1V @ 2.2mA
Supplier Device PackagePG-TO247-4-14
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)18V, 20V
Vgs (Max)+23V, -5V
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs18 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds458 pF @ 800 V
QualificationAEC-Q101

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